Title :
A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications
Author :
Nguyen-Ngoc, D. ; Harame, D.L. ; Malinowski, J.C. ; Jeng, S.J. ; Schonenberg, K.T. ; Gilbert, M.M. ; Berg, G.D. ; Wu, S. ; Soyuer, M. ; Tallman, K.A. ; Stein, K.J. ; Groves, R.A. ; Subbanna, S. ; Colavito, D.B. ; Sunderland, D.A. ; Meyerson, B.S.
Author_Institution :
IBM Microelectron. Div., Hopewell Junction, NY, USA
Abstract :
A BiCMOS technology including 0.25 μm electrical channel length (LEFF) nFET and pFET CMOS devices and 60 GHz fmax SiGe-HBT transistors has been achieved on 200 mm wafers. Both CMOS circuits and SiGe-HBT analog circuits were fabricated on the same chip to demonstrate the high integration capabilities of the technology. The CMOS circuits include CMOS ring oscillators and a 64 k SRAM with a 34 μm2 cell size. The SiGe-HBT circuits include ECL ring oscillators and a Voltage Controlled Oscillator (VCO). This is the highest level of integration yet achieved for any SiGe-base bipolar technology
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; SRAM chips; heterojunction bipolar transistors; integrated circuit technology; mixed analogue-digital integrated circuits; semiconductor materials; voltage-controlled oscillators; 0.25 micron; 200 mm; 60 GHz; 64 kbit; CMOS ring oscillators; ECL ring oscillators; SRAM; SiGe; SiGe-HBT BiCMOS technology; VCO; mixed signal applications; voltage controlled oscillator; BiCMOS integrated circuits; CMOS analog integrated circuits; CMOS technology; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Random access memory; Ring oscillators; Silicon germanium; Substrates;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493873
