DocumentCode
3427193
Title
Improvement of narrow emitter bipolar transistor performance by in-situ highly doped arsenic polysilicon technique
Author
Inou, K. ; Katsumata, Y. ; Matsuda, S. ; Naruse, H. ; Sugaya, H. ; Iwai, Hisato
Author_Institution
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fYear
1995
fDate
2-3 Oct 1995
Firstpage
93
Lastpage
96
Abstract
An in-situ highly doped arsenic polysilicon emitter technology has been developed as a way to improve the degradation of electrical characteristics suffered by narrow emitter bipolar transistors due to the plug effect. We have experimentally confirmed that transistors fabricated with the new technique have good electrical characteristics
Keywords
arsenic; bipolar transistors; elemental semiconductors; heavily doped semiconductors; semiconductor doping; silicon; Si:As; degradation; electrical characteristics; fabrication; in-situ highly doped arsenic polysilicon; narrow emitter bipolar transistor; plug effect; Bipolar transistors; Boron; Epitaxial layers; Merging; Plugs; Rapid thermal annealing; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-2778-0
Type
conf
DOI
10.1109/BIPOL.1995.493874
Filename
493874
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