• DocumentCode
    3427212
  • Title

    A double-spacer technology for the formation of very narrow emitter (0.3 μm) double-polysilicon bipolar transistors using 0.8-μm photolithography

  • Author

    Tsai, Curtis ; Scharf, Brad ; Garone, Peter ; Humphries, Paul ; O, Kenneth

  • Author_Institution
    Analog Devices Inc., Wilmington, MA, USA
  • fYear
    1995
  • fDate
    2-3 Oct 1995
  • Firstpage
    97
  • Lastpage
    101
  • Abstract
    Emitter widths of 0.3 μm on double-polysilicon bipolar transistors are achieved using 0.8-μm photolithography and a double-spacer process. The emitter width reduction is confirmed with structural and electrical measurements. The double-spacer device exhibits superior low current fT and fmax
  • Keywords
    bipolar transistors; photolithography; semiconductor technology; silicon; 0.3 micron; 0.8 micron; Si; double-spacer technology; electrical measurements; emitter widths; narrow emitter double-polysilicon bipolar transistors; photolithography; structural measurements; Bipolar transistors; Costs; Electric variables measurement; Etching; Lithography; Low-noise amplifiers; Plasma applications; Plasma temperature; Radio frequency; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-2778-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.1995.493875
  • Filename
    493875
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3427212