Title :
A double-spacer technology for the formation of very narrow emitter (0.3 μm) double-polysilicon bipolar transistors using 0.8-μm photolithography
Author :
Tsai, Curtis ; Scharf, Brad ; Garone, Peter ; Humphries, Paul ; O, Kenneth
Author_Institution :
Analog Devices Inc., Wilmington, MA, USA
Abstract :
Emitter widths of 0.3 μm on double-polysilicon bipolar transistors are achieved using 0.8-μm photolithography and a double-spacer process. The emitter width reduction is confirmed with structural and electrical measurements. The double-spacer device exhibits superior low current fT and fmax
Keywords :
bipolar transistors; photolithography; semiconductor technology; silicon; 0.3 micron; 0.8 micron; Si; double-spacer technology; electrical measurements; emitter widths; narrow emitter double-polysilicon bipolar transistors; photolithography; structural measurements; Bipolar transistors; Costs; Electric variables measurement; Etching; Lithography; Low-noise amplifiers; Plasma applications; Plasma temperature; Radio frequency; Space technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493875
