DocumentCode
3427306
Title
A 23 GHz static 1/128 frequency divider implemented in a manufacturable Si/SiGe HBT process
Author
Case, Michael ; Knorr, Sigfried ; Larson, Lawrence ; Rensch, Dave ; Harame, David ; Meyerson, Bernard ; Rosenbaum, Steven
Author_Institution
Hughes Res. Labs., Malibu, CA, USA
fYear
1995
fDate
2-3 Oct 1995
Firstpage
121
Lastpage
124
Abstract
The design and measurements demonstrating a high-sensitivity static 1/128 frequency divider operating to 23 GHz implemented in a manufacturable Si/SiGe HBT process are presented
Keywords
Ge-Si alloys; bipolar transistor circuits; frequency dividers; heterojunction bipolar transistors; silicon; 23 GHz; Si-SiGe; Si/SiGe HBT; design; manufacture; static 1/128 frequency divider; Capacitors; Circuits; Epitaxial growth; Fabrication; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing processes; Resistors; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-2778-0
Type
conf
DOI
10.1109/BIPOL.1995.493879
Filename
493879
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