Title :
The pn-junction as an inductive design component in silicon IC processes
Author :
Hurkx, G.A.M. ; Baltus, P.G.M. ; de Boet, J.A.M. ; Geelen, J.A.M. ; Hageraats, J. J E M
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
pn-Junctions in IC processes are investigated for the use as an inductive design component. Measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes. Inhomogeneous breakdown is also investigated
Keywords :
IMPATT diodes; Q-factor; avalanche breakdown; inductors; integrated circuit design; p-n junctions; semiconductor device noise; silicon; IMPATT diodes; Si; avalanche breakdown; inductance; inductive design component; inhomogeneous breakdown; noise; pn-junction; quality factor; silicon IC processes; Avalanche breakdown; Diodes; Electric breakdown; Impedance; Inductance; Inductors; Q factor; Resonance; Resonant frequency; Silicon;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493880
