DocumentCode
3427326
Title
The pn-junction as an inductive design component in silicon IC processes
Author
Hurkx, G.A.M. ; Baltus, P.G.M. ; de Boet, J.A.M. ; Geelen, J.A.M. ; Hageraats, J. J E M
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1995
fDate
2-3 Oct 1995
Firstpage
125
Lastpage
128
Abstract
pn-Junctions in IC processes are investigated for the use as an inductive design component. Measurements of inductance, quality factor and noise under avalanche breakdown conditions are compared to device simulations and the theory for IMPATT diodes. Inhomogeneous breakdown is also investigated
Keywords
IMPATT diodes; Q-factor; avalanche breakdown; inductors; integrated circuit design; p-n junctions; semiconductor device noise; silicon; IMPATT diodes; Si; avalanche breakdown; inductance; inductive design component; inhomogeneous breakdown; noise; pn-junction; quality factor; silicon IC processes; Avalanche breakdown; Diodes; Electric breakdown; Impedance; Inductance; Inductors; Q factor; Resonance; Resonant frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-2778-0
Type
conf
DOI
10.1109/BIPOL.1995.493880
Filename
493880
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