Title :
Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistors
Author :
Vempati, Lakshmi S. ; Cressler, John D. ; Babcock, Jeffrey A. ; Jaeger, Richard C. ; Harame, David L.
Author_Institution :
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
Abstract :
In this work we present the first comprehensive investigation of the low-frequency noise characteristics of an advanced epitaxial Si- and SiGe-base bipolar technology grown by the UHV/CVD technique. The magnitude of the 1/f noise is comparable for SiGe HBTs and Si BJTs for identical bias, geometry, and temperature, indicating that the use of thermodynamically stable SiGe strained-layers does not degrade transistor noise performance. In some of the Si and SiGe samples we have observed random telegraph signals (RTS) associated with excess generation-recombination (G/R) noise. Temperature measurements have been made to extract activation energies of the associated G/R centers
Keywords :
1/f noise; CVD coatings; Ge-Si alloys; bipolar transistors; heterojunction bipolar transistors; semiconductor device noise; silicon; 1/f noise; Si; Si BJTs; SiGe; SiGe HBTs; UHV/CVD growth; activation energies; bipolar transistors; epitaxial base technology; generation-recombination noise; low-frequency noise; random telegraph signals; strained layers; temperature dependence; Degradation; Geometry; Germanium silicon alloys; Low-frequency noise; Noise generators; Signal generators; Silicon germanium; Telegraphy; Temperature; Transistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493881
