Title :
A new technique for measuring junction capacitance in bipolar transistors
Author_Institution :
Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA
Abstract :
A new methodology for measuring p/n junction capacitance is demonstrated. The method is dc based making it suitable for use in automated high volume measurements. The validity of the technique is supported by both simulated and experimentally measured data
Keywords :
bipolar transistors; capacitance measurement; p-n junctions; DC measurement; automated high volume measurements; bipolar transistors; p/n junction capacitance; Bipolar transistors; Capacitance measurement; Circuit simulation; Circuit synthesis; MOSFETs; Monitoring; SPICE; Statistics; Testing; Volume measurement;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493882
