• DocumentCode
    3427505
  • Title

    A new technique for measuring junction capacitance in bipolar transistors

  • Author

    Joardar, Kuntal

  • Author_Institution
    Semicond. Products Sector, Motorola Inc., Mesa, AZ, USA
  • fYear
    1995
  • fDate
    2-3 Oct 1995
  • Firstpage
    133
  • Lastpage
    136
  • Abstract
    A new methodology for measuring p/n junction capacitance is demonstrated. The method is dc based making it suitable for use in automated high volume measurements. The validity of the technique is supported by both simulated and experimentally measured data
  • Keywords
    bipolar transistors; capacitance measurement; p-n junctions; DC measurement; automated high volume measurements; bipolar transistors; p/n junction capacitance; Bipolar transistors; Capacitance measurement; Circuit simulation; Circuit synthesis; MOSFETs; Monitoring; SPICE; Statistics; Testing; Volume measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-2778-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.1995.493882
  • Filename
    493882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3427505