DocumentCode
3427545
Title
CMOS active pixel image sensors fabricated using a 1.8 V, 0.25 /spl mu/m CMOS technology
Author
Hon-Sum Weng ; Chang, R.T. ; Crabbe, E. ; Agnello, P.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
915
Lastpage
918
Abstract
This paper reports the experimental results of the first CMOS active pixel image sensors fabricated using a high-performance 1.8 V, 0.25 /spl mu/m CMOS logic technology. No process modifications were made to the CMOS logic technology so that the impact of device scaling on the image sensing performance can be studied. This paper highlights the device and process design considerations required to enable CMOS as an image sensor technology.
Keywords
CMOS integrated circuits; image sensors; integrated circuit technology; 0.25 micron; 1.8 V; CMOS active pixel image sensor; CMOS logic technology; design; device scaling; fabrication; CMOS image sensors; CMOS logic circuits; CMOS process; CMOS technology; Image sensors; Logic devices; Pixel; Power supplies; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.554128
Filename
554128
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