Title :
CMOS active pixel image sensors fabricated using a 1.8 V, 0.25 /spl mu/m CMOS technology
Author :
Hon-Sum Weng ; Chang, R.T. ; Crabbe, E. ; Agnello, P.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
This paper reports the experimental results of the first CMOS active pixel image sensors fabricated using a high-performance 1.8 V, 0.25 /spl mu/m CMOS logic technology. No process modifications were made to the CMOS logic technology so that the impact of device scaling on the image sensing performance can be studied. This paper highlights the device and process design considerations required to enable CMOS as an image sensor technology.
Keywords :
CMOS integrated circuits; image sensors; integrated circuit technology; 0.25 micron; 1.8 V; CMOS active pixel image sensor; CMOS logic technology; design; device scaling; fabrication; CMOS image sensors; CMOS logic circuits; CMOS process; CMOS technology; Image sensors; Logic devices; Pixel; Power supplies; Switches; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554128
