DocumentCode :
3427708
Title :
Temperature compensation electronics for ISFET readout applications
Author :
Chung, Wen-Yaw ; Yang, Chung-Huung ; Wang, Ming-Chia ; Pijanowska, Dorota G. ; Torbicz, Wradyslaw
Author_Institution :
Dept. of Electron. Eng., Chung Yuan Christian Univ., Chung-li, Taiwan
fYear :
2004
fDate :
1-3 Dec. 2004
Abstract :
This paper presents temperature compensation electronics for ion sensitive field effect transistor (ISFET) sensors. It consists of a bridge-type floating-source ion sensing circuit and a VT extractor centigrade temperature sensor accompanied with a temperature coefficient (TCF) cancellation method. Using LabVlEW packages has developed an extended measurement system including compensation algorithms programming. Experimental results show that the temperature dependence of the Si3N4-gate ISFET sensor improved from 8mV/°C to near 0mV/°C with the proposed temperature compensation circuitry. This system allows a wide range of high accurate pH-level measurements. The method of temperature compensation may also be valid for other biosensors or bioFETs.
Keywords :
biomedical engineering; chemical sensors; compensation; ion sensitive field effect transistors; pH measurement; readout electronics; silicon compounds; ISFET readout applications; LabVlEW packages; Si3N4; VT extractor centigrade temperature sensor; bridge-type floating-source ion sensing circuit; ion sensitive field effect transistor sensors; temperature coefficient cancellation; temperature compensation electronics; Biomedical engineering; Biomedical measurements; Biosensors; Circuits; Data acquisition; Data mining; Diodes; Temperature dependence; Temperature sensors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Biomedical Circuits and Systems, 2004 IEEE International Workshop on
Print_ISBN :
0-7803-8665-5
Type :
conf
DOI :
10.1109/BIOCAS.2004.1454158
Filename :
1454158
Link To Document :
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