Title :
A surface-micromachined tunable vibratory gyroscope
Author :
Oh, Yongsoo ; Lee, Byeungleul ; Baek, Seogsoon ; Kim, Hosuk ; Kim, Jeonggon ; Kang, Seokjin ; Song, Cimoo
Author_Institution :
Microsyst. Lab., Samsung Adv. Inst. of Technol., Suwon, South Korea
Abstract :
A tunable vibratory microgyroscope was fabricated by surface micromachining technology. The 7.5 μm-thick polysilicon structural layer was deposited using LPCVD at 625°C. The resonant frequency in the detection mode was higher than that in the driving mode so that gyroscope could be tuned to the resonant frequencies by applying the inter-plate DC bias. The gyroscope was driven in a resonant state by electrostatic force and detected the output due to a capacitance change between the plate and the polysilicon electrode. The resonant frequencies of gyroscope in the driving and detection direction were measured to be 10.48 kHz and 10.93 kHz, respectively. The resonant frequency in the detection direction could be shifted to 10.52 kHz by applying the tuning voltage of 4.0 V. The quality factor and resonant frequency of detection mode were significantly affected by ambient pressure and decreased as a function of ambient pressure. The noise equivalent rate of this device was about 0.1 deg/sec at 10-2Torr
Keywords :
angular velocity measurement; elemental semiconductors; gyroscopes; micromachining; microsensors; silicon; 10.0E-1 torr; 10.48 kHz; 10.52 kHz; 10.93 kHz; 4 V; Al2O3 ceramic case; LPCVD; Si; Si substrate; Si-SiO2; ambient pressure; detection mode; driving mode; electrostatic force; inter-plate DC bias; noise equivalent rate; polysilicon electrode; polysilicon structural layer; quality factor; resonant frequencies; resonant frequency; resonant state; surface micromachining; tunable vibratory microgyroscope; tuning voltage; Capacitance; Electrodes; Electrostatic measurements; Frequency measurement; Gyroscopes; Micromachining; Resonance; Resonant frequency; Tuning; Voltage;
Conference_Titel :
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-3744-1
DOI :
10.1109/MEMSYS.1997.581824