Title :
A 1.0 μm linear BiCMOS technology with power DMOS capability
Author :
Bayer, Erich ; Bucksch, Walter ; Scoones, Kevin ; Wagensohner, K. ; Erdeljac, John ; Hutter, Louis
Author_Institution :
Texas Instrum. Deutschland GmbH, Freising, Germany
Abstract :
A 1.0 micron BiCMOS process, with lateral DMOS as an available process extension, is presented for mixed-signal and power applications, providing a broad range of active and passive components. The DMOS transistor offers 45-60 V capability with Rsp=1.25 mΩ.cm2 . The process has been used to build a 5A H-Bridge for automotive applications, the design of which is described in detail
Keywords :
BiCMOS analogue integrated circuits; automotive electronics; bridge circuits; integrated circuit technology; mixed analogue-digital integrated circuits; power integrated circuits; 1.0 micron; 45 to 60 V; 5 A; H-Bridge; active components; automotive applications; lateral DMOS power transistor; linear BiCMOS technology; mixed-signal IC; passive components; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Costs; Electric resistance; Logic devices; MOS devices; Performance gain; Power transistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493883
