Locating sensitivity minimizing process inputs in the plasma enhanced chemical vapor deposition (PECVD) of silicon nitride thin films: a neural network based approach

Author

Rosen, I.G. ; Parent, T. ; Cooper, C. ; Chen, P. ; Madhular, A.

Author_Institution

Center for the Intelligent Manuf. of Semicond., Univ. of Southern California, Los Angeles, CA, USA

Volume

5

fYear

1999

fDate

1999

Firstpage

3594

Abstract

We consider the problem of locating a process recipe that produces outputs which are least sensitive to small fluctuations in the process condition. A sensitivity functional describing the relationship between the inputs and outputs and their localized variability is defined using feedforward artificial neural network response surfaces. The most robust process recipe is formulated as a minimization problem. Numerical findings are presented for the problem of finding the most robust process recipe for the plasma enhanced chemical vapor deposition of silicon nitride thin films having a specified refractive index

Keywords

feedforward neural nets; neurocontrollers; plasma CVD; process control; refractive index; sensitivity analysis; thin film devices; GaAs; SiN; chemical vapor deposition; feedforward neural network; minimization; plasma enhanced CVD; process control; process recipe; refractive index; sensitivity analysis; silicon nitride thin films; Artificial neural networks; Chemical vapor deposition; Fluctuations; Plasma chemistry; Refractive index; Response surface methodology; Robustness; Semiconductor thin films; Silicon; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

American Control Conference, 1999. Proceedings of the 1999

Conference_Location

San Diego, CA

ISSN

0743-1619

Print_ISBN

0-7803-4990-3

Type

conf

DOI

10.1109/ACC.1999.782436

Filename

782436