Title :
Scaleability of DC/AC non-linear dispersion models for microwave FETs
Author :
Cojocaru, V.I. ; Brazil, T.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. Dublin, Ireland
Abstract :
This paper addresses the issue of scaleability in circuit based models for FETs, emphasising for the first time the particularly difficult problems associated with the scaleability of DC/AC dispersion phenomena. Results of a study carried out on both MESFET and PHEMT foundry processes, show that while the differential DC/AC transconductance obeys straightforward scaling rules, the output conductance does not. An equivalent circuit based solution that incorporates a differential DC/AC dispersion modelling methodology is presented. The solution is compact, obeys the required conservation constraints and can account for the scaling inconsistencies observed in the output conductance.
Keywords :
Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; DC/AC nonlinear dispersion model; MESFET; PHEMT; conservation; equivalent circuit; foundry process; microwave FET; output conductance; scaleability; transconductance; Circuit testing; Design engineering; Equivalent circuits; Foundries; MESFETs; MMICs; Microwave FETs; PHEMTs; Solid modeling; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602815