• DocumentCode
    3427969
  • Title

    1.5 μm analog BiCMOS/DMOS process for medium voltage and current power ICs applications up to 50 V

  • Author

    El-diwany, Monir ; McGregor, Joel ; Demirliogiu, E. ; Huang, Robert

  • Author_Institution
    Dept. of Analog Process Technol. Dev., Nat. Semicond. Corp., Santa Clara, CA, USA
  • fYear
    1995
  • fDate
    2-3 Oct 1995
  • Firstpage
    142
  • Lastpage
    145
  • Abstract
    ABCD150 is a 1.5 μm analog BiCMOS/DMOS process. It addresses power ICs for medium voltage and current applications up to 50 V. Four types of power MOS transistors are available; low voltage MOS; high voltage MOS; vertical DMOS; and HV lateral DMOS. Each is optimized for minimum specific on resistance Rds(on) (in Ω.mm2 ) at their respective operating voltages
  • Keywords
    BiCMOS analogue integrated circuits; integrated circuit technology; power integrated circuits; 1.5 micron; 50 V; ABCD150; HV lateral DMOS transistors; analog BiCMOS/DMOS process; high voltage MOS transistors; low voltage MOS transistors; medium current applications; medium voltage applications; power ICs; power MOS transistors; specific on resistance; vertical DMOS transistors; BiCMOS integrated circuits; Capacitors; Diodes; Geometry; MOS devices; Manufacturing processes; Medium voltage; Planarization; Power integrated circuits; Resistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-2778-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.1995.493884
  • Filename
    493884
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3427969