Title :
1.5 μm analog BiCMOS/DMOS process for medium voltage and current power ICs applications up to 50 V
Author :
El-diwany, Monir ; McGregor, Joel ; Demirliogiu, E. ; Huang, Robert
Author_Institution :
Dept. of Analog Process Technol. Dev., Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
ABCD150 is a 1.5 μm analog BiCMOS/DMOS process. It addresses power ICs for medium voltage and current applications up to 50 V. Four types of power MOS transistors are available; low voltage MOS; high voltage MOS; vertical DMOS; and HV lateral DMOS. Each is optimized for minimum specific on resistance Rds(on) (in Ω.mm2 ) at their respective operating voltages
Keywords :
BiCMOS analogue integrated circuits; integrated circuit technology; power integrated circuits; 1.5 micron; 50 V; ABCD150; HV lateral DMOS transistors; analog BiCMOS/DMOS process; high voltage MOS transistors; low voltage MOS transistors; medium current applications; medium voltage applications; power ICs; power MOS transistors; specific on resistance; vertical DMOS transistors; BiCMOS integrated circuits; Capacitors; Diodes; Geometry; MOS devices; Manufacturing processes; Medium voltage; Planarization; Power integrated circuits; Resistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493884
