Title :
A CMOS image sensor with combined analog nonvolatile storage capability
Author :
Aslam, A. ; Brockherde, W. ; Hosticka, B.J. ; Vogt, H. ; Zimmer, G.
Author_Institution :
Fraunhofer Inst. of Microelectron. Circuits & Syst., Duisburg, Germany
Abstract :
A light-sensitive PMOS-transistor located in a floating n-well and combined with an analog EEPROM has been fabricated as a single element in a standard 1.5 /spl mu/m single-poly CMOS/EEPROM technology. It provides nonvolatile weighted analog image storage and can be programmed in parallel, if implemented as an array. As an example, an image sensor with a nonvolatile analog programmable offset and sensitivity adjustment has been realised.
Keywords :
CMOS analogue integrated circuits; EPROM; analogue storage; image sensors; phototransistors; 1.5 micron; CMOS image sensor; EEPROM; analog nonvolatile image storage; array; floating n-well; light-sensitive PMOS-transistor; parallel programming; CMOS image sensors; CMOS technology; Circuits; EPROM; Image sensors; Image storage; Nonvolatile memory; Sensor arrays; Signal processing; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554130
