DocumentCode
3427986
Title
A CMOS image sensor with combined analog nonvolatile storage capability
Author
Aslam, A. ; Brockherde, W. ; Hosticka, B.J. ; Vogt, H. ; Zimmer, G.
Author_Institution
Fraunhofer Inst. of Microelectron. Circuits & Syst., Duisburg, Germany
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
923
Lastpage
926
Abstract
A light-sensitive PMOS-transistor located in a floating n-well and combined with an analog EEPROM has been fabricated as a single element in a standard 1.5 /spl mu/m single-poly CMOS/EEPROM technology. It provides nonvolatile weighted analog image storage and can be programmed in parallel, if implemented as an array. As an example, an image sensor with a nonvolatile analog programmable offset and sensitivity adjustment has been realised.
Keywords
CMOS analogue integrated circuits; EPROM; analogue storage; image sensors; phototransistors; 1.5 micron; CMOS image sensor; EEPROM; analog nonvolatile image storage; array; floating n-well; light-sensitive PMOS-transistor; parallel programming; CMOS image sensors; CMOS technology; Circuits; EPROM; Image sensors; Image storage; Nonvolatile memory; Sensor arrays; Signal processing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.554130
Filename
554130
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