Title :
AIDE (Angle-Implanted Drain and Emitter): A BiCMOS technology module for mixed-signal applications
Author :
Chen, Hung-Sheng ; Zhao, Ji ; Teng, Chih Sieh ; Leu, Len Yi
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
Increased mixed-signal device performance and reliability in a BiCMOS technology is achieved by using Angle-Implanted Drain and Emitter (AIDE) technology. An order of magnitude increase in lifetime is obtained in MOS/BJT transistors, while a >40% increase in transistor gain is achieved. This technology module is applicable to existing BiCMOS process with minimum increase in process complexity
Keywords :
BiCMOS integrated circuits; integrated circuit technology; ion implantation; mixed analogue-digital integrated circuits; AIDE technology; BiCMOS technology module; angle-implanted drain/emitter; mixed-signal applications; Analog circuits; BiCMOS integrated circuits; Bipolar transistors; Degradation; Immune system; Implants; MOS devices; MOSFETs; Semiconductor device reliability; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493885
