DocumentCode
3428065
Title
AIDE (Angle-Implanted Drain and Emitter): A BiCMOS technology module for mixed-signal applications
Author
Chen, Hung-Sheng ; Zhao, Ji ; Teng, Chih Sieh ; Leu, Len Yi
Author_Institution
Nat. Semicond. Corp., Santa Clara, CA, USA
fYear
1995
fDate
2-3 Oct 1995
Firstpage
146
Lastpage
149
Abstract
Increased mixed-signal device performance and reliability in a BiCMOS technology is achieved by using Angle-Implanted Drain and Emitter (AIDE) technology. An order of magnitude increase in lifetime is obtained in MOS/BJT transistors, while a >40% increase in transistor gain is achieved. This technology module is applicable to existing BiCMOS process with minimum increase in process complexity
Keywords
BiCMOS integrated circuits; integrated circuit technology; ion implantation; mixed analogue-digital integrated circuits; AIDE technology; BiCMOS technology module; angle-implanted drain/emitter; mixed-signal applications; Analog circuits; BiCMOS integrated circuits; Bipolar transistors; Degradation; Immune system; Implants; MOS devices; MOSFETs; Semiconductor device reliability; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-2778-0
Type
conf
DOI
10.1109/BIPOL.1995.493885
Filename
493885
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