DocumentCode
3428178
Title
A single-bias diode-regulated 60 GHz monolithic LNA
Author
Maruhashi, K. ; Ohata, K. ; Madihian, M.
Author_Institution
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Volume
2
fYear
1997
fDate
8-13 June 1997
Firstpage
443
Abstract
This paper presents a small-size 60 GHz-band GaAs MMIC LNA with a single bias supply. A diode-regulated self-bias circuit was proposed and demonstrated for suppressing the FET drain current variations due to threshold voltage nonuniformities. The developed three-stage MMIC LNA exhibited an average noise figure of 3.3 dB with 18 dB gain from 58 to 62 GHz. The chip size of the LNA is 1.85 mm/spl times/1.07 mm/spl times/0.04 mm.
Keywords
III-V semiconductors; JFET integrated circuits; MMIC amplifiers; field effect MIMIC; gallium arsenide; integrated circuit noise; millimetre wave amplifiers; 18 dB; 3.3 dB; 58 to 62 GHz; EHF; FET drain current variations suppression; GaAs; GaAs MMIC LNA; diode-regulated self-bias circuit; monolithic LNA; three-stage configuration; threshold voltage nonuniformities; Circuit testing; Current distribution; Diodes; FETs; Frequency; MMICs; National electric code; Noise figure; Resistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.602828
Filename
602828
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