Title :
A single-bias diode-regulated 60 GHz monolithic LNA
Author :
Maruhashi, K. ; Ohata, K. ; Madihian, M.
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
This paper presents a small-size 60 GHz-band GaAs MMIC LNA with a single bias supply. A diode-regulated self-bias circuit was proposed and demonstrated for suppressing the FET drain current variations due to threshold voltage nonuniformities. The developed three-stage MMIC LNA exhibited an average noise figure of 3.3 dB with 18 dB gain from 58 to 62 GHz. The chip size of the LNA is 1.85 mm/spl times/1.07 mm/spl times/0.04 mm.
Keywords :
III-V semiconductors; JFET integrated circuits; MMIC amplifiers; field effect MIMIC; gallium arsenide; integrated circuit noise; millimetre wave amplifiers; 18 dB; 3.3 dB; 58 to 62 GHz; EHF; FET drain current variations suppression; GaAs; GaAs MMIC LNA; diode-regulated self-bias circuit; monolithic LNA; three-stage configuration; threshold voltage nonuniformities; Circuit testing; Current distribution; Diodes; FETs; Frequency; MMICs; National electric code; Noise figure; Resistors; Threshold voltage;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602828
