Title :
State-variable modeling of high-level injection regions in power devices-application to power system simulation
Author :
Allard, Bruno ; Morel, Hervé ; Chante, J.-P.
Author_Institution :
Centre de Genie Electr. de Lyon-ECPA, INSA de Lyon, Villeurbanne, France
fDate :
29 Jun-3 Jul 1992
Abstract :
Modeling procedures that allow accurate simulations of power systems and predictions of electrical constraints endured by power devices are presented. Bond graph theory leads to a device modular analysis, and internal approximation allow state variable modeling of the high-level injection semiconductor layers. Applying these methods to the high-voltage power bipolar transistor gives good primary simulation results
Keywords :
bipolar transistors; digital simulation; graph theory; power system analysis computing; power transistors; bond graph theory; high-level injection regions; high-level injection semiconductor layers; high-voltage power bipolar transistor; modular analysis; power devices; power system simulation; Analytical models; Bipolar transistors; Circuit simulation; Equations; Power system modeling; Power system simulation; Power system transients; Predictive models; Semiconductor devices; Semiconductor process modeling;
Conference_Titel :
Power Electronics Specialists Conference, 1992. PESC '92 Record., 23rd Annual IEEE
Conference_Location :
Toledo
Print_ISBN :
0-7803-0695-3
DOI :
10.1109/PESC.1992.254789
