DocumentCode
3428308
Title
A precise model for the transient characteristics of power diodes
Author
Kraus, R. ; Hoffmann, K. ; Mattausch, H.J.
Author_Institution
Bundeswehr Munich Univ., Germany
fYear
1992
fDate
29 Jun-3 Jul 1992
Firstpage
863
Abstract
A power diode model for circuit simulations is described. All important phenomena like transient behavior, temperature dependence, emitter recombination, mobile charge carriers in depletion layer, carrier multiplication, and self-heating are included. Comparisons between simulations and measurements show less than 10% deviation of current and voltage over the temperature range of 25°C-125°C
Keywords
circuit analysis computing; digital simulation; semiconductor device models; semiconductor diodes; transients; 25 to 125 degC; carrier multiplication; circuit simulations; depletion layer; emitter recombination; mobile charge carriers; model; power diodes; self-heating; temperature dependence; transient characteristics; Charge carriers; Circuit simulation; Current measurement; Differential equations; Diodes; Power measurement; Predictive models; Temperature dependence; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1992. PESC '92 Record., 23rd Annual IEEE
Conference_Location
Toledo
Print_ISBN
0-7803-0695-3
Type
conf
DOI
10.1109/PESC.1992.254792
Filename
254792
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