• DocumentCode
    3428353
  • Title

    First Demonstration of p-HEMTs in the newly developed GaAs On Insulator (GOI) Technology

  • Author

    Parikh, P. ; Chavarkar, P. ; Wu, Ying Fa ; Pinsukanjana, P. ; Mishra, Umesh K.

  • Author_Institution
    University of California, Santa Barbara
  • fYear
    1996
  • fDate
    8-11 Dec. 1996
  • Firstpage
    931
  • Lastpage
    933
  • Abstract
    Impedance probes, which are well known in geophysical prospection, in particular for ground permittivity investigations, have been successfully transposed to space plasmas. Transmitting and receiving electrodes are used for measuring on open circuit the dynamic impedance of the system at several fixed frequencies over a range that includes characteristic frequencies of the ambient plasma. The measurements are then interpreted using a suitable theory and the values of plasma parameters, such as the electron density, temperature, and possibly the relative velocity of the plasma and the spacecraft, can be deduced. To show how powerful this technique is, results obtained in the Earth??s plasmasphere by the mutual impedance probe onboard ROSETTA are presented.
  • Keywords
    Cable insulation; Epitaxial layers; Gallium arsenide; Leakage current; Oxidation; Substrates; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1996. IEDM '96., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-3393-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1996.554132
  • Filename
    554132