DocumentCode
3428353
Title
First Demonstration of p-HEMTs in the newly developed GaAs On Insulator (GOI) Technology
Author
Parikh, P. ; Chavarkar, P. ; Wu, Ying Fa ; Pinsukanjana, P. ; Mishra, Umesh K.
Author_Institution
University of California, Santa Barbara
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
931
Lastpage
933
Abstract
Impedance probes, which are well known in geophysical prospection, in particular for ground permittivity investigations, have been successfully transposed to space plasmas. Transmitting and receiving electrodes are used for measuring on open circuit the dynamic impedance of the system at several fixed frequencies over a range that includes characteristic frequencies of the ambient plasma. The measurements are then interpreted using a suitable theory and the values of plasma parameters, such as the electron density, temperature, and possibly the relative velocity of the plasma and the spacecraft, can be deduced. To show how powerful this technique is, results obtained in the Earth??s plasmasphere by the mutual impedance probe onboard ROSETTA are presented.
Keywords
Cable insulation; Epitaxial layers; Gallium arsenide; Leakage current; Oxidation; Substrates; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.554132
Filename
554132
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