Title :
The p-MOS controlled lateral thyristor: A MOS controllable thyristor suitable for integration
Author :
Chen, W. ; Amaratunga, G.A.J.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
A novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2D numerical simulations and experimental fabrication
Keywords :
CMOS integrated circuits; MOS-controlled thyristors; power integrated circuits; 2D numerical simulations; CMOS compatible thyristor; MOS controlled lateral thyristor; p-MOS gate; parasitic latchup elimination; Anodes; Bipolar transistors; Cathodes; Charge carrier processes; Conductivity; Current density; MOS devices; Numerical simulation; Thyristors; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493898
