Title :
High-speed insulated-gate bipolar transistors fabricated using silicon wafer bonding
Author :
Tu, S. Larry ; Tam, Gordon ; Tam, Pak M. ; Taomoto, Aileen
Author_Institution :
Adv. Custom Technol. Center, Motorola Inc., Mesa, AZ, USA
Abstract :
A high-speed IGBT fabricated using silicon direct wafer bonding is demonstrated. By controlling the heavily-doped n+ buffer layer in the device, an on-state voltage drop of 1.4 V at current density of 100 A/cm2 and a turn-off fall time less than 100 nanoseconds are achieved
Keywords :
insulated gate bipolar transistors; power transistors; wafer bonding; 1.4 V; 600 V; 70 ns; Si; Si wafer bonding; heavily-doped n+ buffer layer; high-speed IGBT; insulated-gate bipolar transistors; Buffer layers; Charge carrier lifetime; Doping; Implants; Insulated gate bipolar transistors; Insulation; Medical simulation; Silicon; Voltage control; Wafer bonding;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493899
