DocumentCode
3428673
Title
Anisotropic-etching process simulation system MICROCAD analyzing complete 3D etching profiles of single crystal silicon
Author
Asaumi, Kazuo ; Iriye, Yasuroh ; Sato, Kazuo
Author_Institution
Fuji Res. Inst. Corp., Tokyo, Japan
fYear
1997
fDate
26-30 Jan 1997
Firstpage
412
Lastpage
417
Abstract
We have developed an anisotropic-chemical-etching process simulation system, MICRO-CAD, which is equipped with a database of orientation dependent etching rates of single crystal silicon. When crystallographic orientation of the wafer, mask pattern, etching media and etching conditions such as its concentration and temperature are given, it calculates 3D etching profiles according to the etching time increments
Keywords
digital simulation; electronic engineering computing; elemental semiconductors; etching; silicon; 3D etching profiles; MICROCAD; Si; Si single crystal; anisotropic-chemical-etching process; concentration; crystallographic orientation; mask pattern; simulation; temperature; wafer; Analytical models; Anisotropic magnetoresistance; Crystallography; Databases; Etching; Graphical user interfaces; Graphics; Shape; Silicon compounds; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location
Nagoya
ISSN
1084-6999
Print_ISBN
0-7803-3744-1
Type
conf
DOI
10.1109/MEMSYS.1997.581877
Filename
581877
Link To Document