Title :
Over-60-GHz operation of SCFL dynamic frequency divider using InP-based HEMTs
Author :
Umeda, Y. ; Osafune, K. ; Enoki, T. ; Yokoyama, H. ; Ishii, Y. ; Imamura, Y.
Author_Institution :
NTT Syst. Electron. Labs., Kanagawa, Japan
Abstract :
A toggle operation of 39 to 63.5 GHz has been achieved by a digital dynamic frequency divider. The frequency divider employs a pair of clocked inverters with source coupled FET logic (SCFL) and uses 0.1-/spl mu/m-gate InAlAs/InGaAs/InP HEMTs with high uniformity and performance. On a 2-in. wafer the frequency divider showed a maximum toggle frequency of 59.1/spl plusmn/3.3 GHz with a fabrication yield of 89%. This is the highest operation frequency yet obtained by a broadband digital frequency divider.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect MIMIC; field effect digital integrated circuits; frequency dividers; gallium arsenide; indium compounds; integrated circuit yield; logic gates; millimetre wave frequency convertors; 0.1 mum; 2 inch; 39 to 63.5 GHz; 59.1 GHz; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP HEMTs; InP; SCFL dynamic frequency divider; broadband digital frequency divider; clocked inverters; digital dynamic frequency divider; fabrication yield; maximum toggle frequency; source coupled FET logic; toggle operation; Clocks; FETs; Fabrication; Frequency conversion; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Pulse inverters;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602831
