Title :
Measurements of Young´s modulus, Poisson´s ratio, and tensile strength of polysilicon
Author :
Sharpe, William N., Jr. ; Yuan, Bin ; Vaidyanathan, Ranji ; Edwards, Richard L.
Author_Institution :
Dept. of Mech. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Abstract :
New techniques and procedures are described that enable one to measure the mechanical properties of polysilicon films that are 3.5 μm thick. Polysilicon is deposited onto a silicon substrate which is then etched away to leave a tensile specimen in the middle of the die. The grip ends of the structure are glued to the grips of a linear air bearing attached to a piezoelectrically actuated loading system. Strain is measured directly on the specimen with laser interferometry. The specimens are fabricated at the Microelectronics Center of North Carolina with their MUMPs process. The results of 48 tests on five different sets of MUMPs specimens yield the following material properties: Young´s modulus=169±6.15 GPa, Poisson´s ratio=0.22±0.011, and tensile strength=1.20±0.15 GPa These values have a reasonably low coefficient of variation which demonstrates the consistency of both the processing and the measurement techniques
Keywords :
Poisson ratio; Young´s modulus; elastic moduli measurement; elemental semiconductors; mechanical testing; mechanical variables measurement; micromechanical devices; semiconductor thin films; silicon; strain measurement; tensile strength; tensile testing; 3.5 mum; Poisson´s ratio; Si; Si substrate; Young´s modulus; laser interferometry; linear air bearing; mechanical properties; piezoelectrically actuated loading; polysilicon; tensile specimen; tensile strength; Etching; Interferometry; Materials testing; Mechanical factors; Mechanical variables measurement; Microelectronics; Piezoelectric films; Silicon; Strain measurement; Thickness measurement;
Conference_Titel :
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-3744-1
DOI :
10.1109/MEMSYS.1997.581881