DocumentCode :
3429088
Title :
Monolithic fabrication of flexible film and thinned integrated circuits
Author :
Kaneko, Shinji ; Asaoka, Nobuyoshi ; Tosaka, Hiroshi ; Ohta, Ryo ; Yanagisawa, Kazuhisa
Author_Institution :
Olympus Opt. Co. Ltd., Tokyo, Japan
fYear :
1997
fDate :
26-30 Jan 1997
Firstpage :
471
Lastpage :
476
Abstract :
A new monolithic device technology for micromachines has been developed. This device consists of a flexible film and thinned integrated circuits. The fabrication process is compatible with high performance CMOS devices. The flexible film includes high density wires and other electric functions in several micrometers thick. The integrated circuits are thinned by electrochemical etching to less than 20 μm thick. This device is useful for integration and size reduction of electric components for micromachine. We have fabricated the monolithic devices and investigated the characteristics
Keywords :
CMOS integrated circuits; elemental semiconductors; etching; micromachining; micromechanical devices; silicon; 0 to 20 micron; CMOS; Si; electrochemical etching; fabrication process; high density wires; micromachines; micromechanical devices; monolithic device technology; size reduction; CMOS technology; Electrodes; Etching; Fabrication; Monolithic integrated circuits; Optical films; Polyimides; Silicon; Substrates; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location :
Nagoya
ISSN :
1084-6999
Print_ISBN :
0-7803-3744-1
Type :
conf
DOI :
10.1109/MEMSYS.1997.581905
Filename :
581905
Link To Document :
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