DocumentCode
3429213
Title
100 MHz-500 MHz, 1 Watt distributed power amplifier with discrete MOSFET devices
Author
Siew, Tan Teik ; Bin Ain, Mohd Fadzil ; Hassan, Syed Idris Syed
Author_Institution
Sch. of Electr. & Electron. Eng., Univ. Sains Malaysia
fYear
2005
fDate
20-21 Dec. 2005
Abstract
This paper describes the design of a discrete MOSFETs distributed power amplifier with 1 Watt output power in the 100 MHz-500 MHz frequency range. The circuit was fabricated in discrete form by using three MOSFET devices (RD01MUS1 from Mitsubishi) with 50 Ohms input and output impedance. Experimental and simulation results of such a structure are discussed
Keywords
UHF power amplifiers; VHF amplifiers; power MOSFET; 1 W; 100 to 500 MHz; discrete MOSFET devices; distributed power amplifier; Distributed amplifiers; Frequency; Impedance; MOSFET circuits; Power MOSFET; Power amplifiers; Power transmission lines; Radiofrequency amplifiers; Transconductance; Transmission line theory;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Electromagnetics, 2005. APACE 2005. Asia-Pacific Conference on
Conference_Location
Johor
Print_ISBN
0-7803-9431-3
Type
conf
DOI
10.1109/APACE.2005.1607806
Filename
1607806
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