DocumentCode :
3429285
Title :
Surface processing in advanced microelectronic technology
Author :
Ruzyllo, J.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fYear :
2001
fDate :
26-30 June 2001
Firstpage :
41
Abstract :
Summary form only given. Provides an overview of key issues related to surface processing in silicon microelectronics technology. The objective is to underscore the fact that in future generation microelectronics manufacturing technologies ever increasing attention will be paid to the methods and tools used to process, control and characterize properties of the silicon surface. Specific approaches to silicon surface processing and characterization will be considered. To a significant degree the requirements concerning surface processing in silicon device technology apply to the manufacturing of devices using wide bandgap semiconductors (e.g. 2.5 eV). Among them two materials of greatest practical importance at this time are SiC and GaN. Some aspects of surface processing in SiC and GaN device fabrication will also be discussed.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; silicon; silicon compounds; surface treatment; wide band gap semiconductors; GaN; Si; SiC; advanced microelectronic technology; characterization; device fabrication; device performance; near-surface region; overview; properties; semiconductor device structures; silicon; surface processing; surface region; wide bandgap semiconductors; Character generation; Gallium nitride; Manufacturing processes; Microelectronics; Process control; Semiconductor device manufacture; Semiconductor materials; Silicon carbide; Silicon devices; Wide band gap semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
Type :
conf
DOI :
10.1109/WBL.2001.946544
Filename :
946544
Link To Document :
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