Title :
Optoelectronic devices based on (AlGaIn)N structures on GaN crystals
Author_Institution :
High Pressure Res. Center, UNIPRESS, Warsaw, Poland
Abstract :
Summary form only given. One of the most important problems in (AlGaIn)N technology is lack of easily available lattice-matched substrate for epitaxial growth. The author shows the advantages of using high pressure (HP) bulk crystals as substrates for nitride epitaxy over sapphire or SiC. The experimental results are presented from atomic force microscopy (AFM), X-ray diffraction (XRD) rocking curves, transmission electron microscopy (TEM), photoluminescence (PL), and electroluminescence (EL) of a blue laser.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; atomic force microscopy; dislocations; electroluminescence; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor lasers; substrates; transmission electron microscopy; wide band gap semiconductors; (AlGaIn)N structures; AFM; AlGaInN; GaN; GaN crystals; TEM; X-ray diffraction; XRD; atomic force microscopy; blue laser; dislocations; electroluminescence; epitaxial growth; high pressure bulk crystals; lattice-matched substrate; nitride epitaxy; optoelectronic devices; photoluminescence; transmission electron microscopy; Atomic beams; Atomic force microscopy; Crystals; Epitaxial growth; Gallium nitride; Optoelectronic devices; Silicon carbide; Substrates; Transmission electron microscopy; X-ray lasers;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946548
