Optoelectronic devices based on (AlGaIn)N structures on GaN crystals

Author

Leszczynski, M.

Author_Institution

High Pressure Res. Center, UNIPRESS, Warsaw, Poland

fYear

2001

fDate

26-30 June 2001

Firstpage

65

Lastpage

66

Abstract

Summary form only given. One of the most important problems in (AlGaIn)N technology is lack of easily available lattice-matched substrate for epitaxial growth. The author shows the advantages of using high pressure (HP) bulk crystals as substrates for nitride epitaxy over sapphire or SiC. The experimental results are presented from atomic force microscopy (AFM), X-ray diffraction (XRD) rocking curves, transmission electron microscopy (TEM), photoluminescence (PL), and electroluminescence (EL) of a blue laser.

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; atomic force microscopy; dislocations; electroluminescence; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor lasers; substrates; transmission electron microscopy; wide band gap semiconductors; (AlGaIn)N structures; AFM; AlGaInN; GaN; GaN crystals; TEM; X-ray diffraction; XRD; atomic force microscopy; blue laser; dislocations; electroluminescence; epitaxial growth; high pressure bulk crystals; lattice-matched substrate; nitride epitaxy; optoelectronic devices; photoluminescence; transmission electron microscopy; Atomic beams; Atomic force microscopy; Crystals; Epitaxial growth; Gallium nitride; Optoelectronic devices; Silicon carbide; Substrates; Transmission electron microscopy; X-ray lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of

Conference_Location

Zakopane, Poland

Print_ISBN

0-7803-7136-4

Type

conf

DOI

10.1109/WBL.2001.946548

Filename

946548