DocumentCode
3429347
Title
Real time characterization of wide band gap thin film growth using UV-extended spectroscopic ellipsometry: applications to cubic boron nitride
Author
Zapien, J.A. ; Collins, Robert W. ; Pillone, L.J. ; Qi, H. ; Messier, R.
Author_Institution
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
fYear
2001
fDate
26-30 June 2001
Firstpage
67
Lastpage
69
Abstract
We report the application of the UV-extended multichannel ellipsometer in studies of the growth and layered structure of cBN films deposited on c-Si using pulsed dc sputtering of a B/sub 4/C target with rf substrate bias.
Keywords
III-V semiconductors; boron compounds; ellipsometry; semiconductor growth; sputter deposition; ultraviolet spectra; wide band gap semiconductors; B/sub 4/C; BN; RF substrate bias; Si; UV-extended multichannel ellipsometer; cBN films; cubic boron nitride; ellipsometry; growth; layered structure; pulsed DC sputtering; real time characterization; wide band gap films; Boron; Instruments; Lamps; Optical films; Optical sensors; Polarization; Spectroscopy; Sputtering; Transistors; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location
Zakopane, Poland
Print_ISBN
0-7803-7136-4
Type
conf
DOI
10.1109/WBL.2001.946549
Filename
946549
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