DocumentCode :
3429347
Title :
Real time characterization of wide band gap thin film growth using UV-extended spectroscopic ellipsometry: applications to cubic boron nitride
Author :
Zapien, J.A. ; Collins, Robert W. ; Pillone, L.J. ; Qi, H. ; Messier, R.
Author_Institution :
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
fYear :
2001
fDate :
26-30 June 2001
Firstpage :
67
Lastpage :
69
Abstract :
We report the application of the UV-extended multichannel ellipsometer in studies of the growth and layered structure of cBN films deposited on c-Si using pulsed dc sputtering of a B/sub 4/C target with rf substrate bias.
Keywords :
III-V semiconductors; boron compounds; ellipsometry; semiconductor growth; sputter deposition; ultraviolet spectra; wide band gap semiconductors; B/sub 4/C; BN; RF substrate bias; Si; UV-extended multichannel ellipsometer; cBN films; cubic boron nitride; ellipsometry; growth; layered structure; pulsed DC sputtering; real time characterization; wide band gap films; Boron; Instruments; Lamps; Optical films; Optical sensors; Polarization; Spectroscopy; Sputtering; Transistors; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
Type :
conf
DOI :
10.1109/WBL.2001.946549
Filename :
946549
Link To Document :
بازگشت