DocumentCode
3429357
Title
Sacrificial aluminum etching for CMOS microstructures
Author
Paul, O. ; Westberg, D. ; Hornung, M. ; Ziebart, V. ; Baltes, H.
Author_Institution
Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
fYear
1997
fDate
26-30 Jan 1997
Firstpage
523
Lastpage
528
Abstract
This paper reports recent advances in surface micromachining by sacrificial aluminum etching (SALE). This method is applied to standard CMOS substrates in a single-mask, or even maskless, post-processing scheme. Underetching distances of several hundred microns are feasible. Design issues and technological steps such as protection of contact pads, etching, rinsing, and drying are discussed. The combination of SALE with other micromachining techniques, e.g., silicon bulk micromachining or material deposition is reported. New devices include thermal, capacitive, and mechanical structures for thermal microfluidics, the measurement of pressures and inertial forces, and the evaluation of mechanical thin film properties
Keywords
CMOS integrated circuits; aluminium; etching; fluidics; force measurement; micromechanical devices; microsensors; pressure measurement; Al sacrificial etching; Al-Si; CMOS microstructures; CMOS substrates; Si; capacitive structures; contact pads; drying; etching; mechanical structures; mechanical thin film properties; rinsing; technological steps; thermal microfluidics; underetching; Aluminum; CMOS technology; Dry etching; Marketing and sales; Micromachining; Microstructure; Protection; Silicon; Substrates; Thermal force;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location
Nagoya
ISSN
1084-6999
Print_ISBN
0-7803-3744-1
Type
conf
DOI
10.1109/MEMSYS.1997.581918
Filename
581918
Link To Document