DocumentCode :
3429443
Title :
Development of Blue Optoelectronics- government project
Author :
Porowski, S.
Author_Institution :
High Pressure Res. Center, UNIPRESS, Warsaw, Poland
fYear :
2001
fDate :
26-30 June 2001
Firstpage :
83
Abstract :
Summary form only given. The author shows the main properties of III-N compounds which make them the most attractive materials for applications in the new generation of electronic and photonic devices. Nitride-based blue/green/white LEDs and visible-blind UV-detectors are already produced in large quantities. Other products are expected to enter the market in the near future. Poland is recognised as one of the leaders in the area of research on nitrides. The author shows the main directions of this research (basic and applied). Most of the activity concerning the commercialization of the nitride-based devices in Poland is financed by the governmental project: " Development of Blue Optoelectronics". The Project covers three topics: visible-blind and solar-blind UV detectors; blue lasers; and commercial products based on nitride devices.
Keywords :
III-V semiconductors; optoelectronic devices; semiconductor lasers; ultraviolet detectors; wide band gap semiconductors; III-N compounds; blue lasers; blue optoelectronics; commercial products; nitride devices; nitride-based blue/green/white LEDs; properties; solar-blind UV detectors; visible-blind UV detectors; visible-blind UV-detectors; Commercialization; Consumer electronics; Detectors; Light emitting diodes; Materials science and technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
Type :
conf
DOI :
10.1109/WBL.2001.946553
Filename :
946553
Link To Document :
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