Title :
Realising the potential of SiC devices
Author :
Harris, C.I. ; Ericsson, P. ; Savage, S. ; Konstantinov, A. ; Bakowski, M.
Author_Institution :
ACREO AB, Kista, Sweden
Abstract :
Only in the last 12 months have we seen the first truly commercial SiC devices being launched on the marketplace. One key factor has been the development in wafer production. This paper looks at developments in three important areas, high frequency transistors, high power devices and high temperature sensors. In each case recent developments in design and technology have allowed the realisation of devices that make use of the material properties to achieve performance far beyond that possible with conventional semiconductors.
Keywords :
electric sensing devices; field effect transistors; microwave transistors; power semiconductor devices; silicon compounds; wide band gap semiconductors; MiSiCFET; SiC; SiC devices; design; high frequency transistors; high power devices; high temperature sensors; material properties; wafer production; Crystalline materials; Europe; Fasteners; Marketing and sales; Material properties; Production; Research and development; Semiconductor materials; Silicon carbide; Temperature sensors;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946555
