Realising the potential of SiC devices

Author

Harris, C.I. ; Ericsson, P. ; Savage, S. ; Konstantinov, A. ; Bakowski, M.

Author_Institution

ACREO AB, Kista, Sweden

fYear

2001

fDate

26-30 June 2001

Firstpage

91

Lastpage

93

Abstract

Only in the last 12 months have we seen the first truly commercial SiC devices being launched on the marketplace. One key factor has been the development in wafer production. This paper looks at developments in three important areas, high frequency transistors, high power devices and high temperature sensors. In each case recent developments in design and technology have allowed the realisation of devices that make use of the material properties to achieve performance far beyond that possible with conventional semiconductors.

Keywords

electric sensing devices; field effect transistors; microwave transistors; power semiconductor devices; silicon compounds; wide band gap semiconductors; MiSiCFET; SiC; SiC devices; design; high frequency transistors; high power devices; high temperature sensors; material properties; wafer production; Crystalline materials; Europe; Fasteners; Marketing and sales; Material properties; Production; Research and development; Semiconductor materials; Silicon carbide; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of

Conference_Location

Zakopane, Poland

Print_ISBN

0-7803-7136-4

Type

conf

DOI

10.1109/WBL.2001.946555

Filename

946555