Title :
Synthesis of GaN by reactive sputtering at low temperature
Author :
Jagoda, A. ; Dobrzanski, L. ; Stanczyk, B.
Author_Institution :
Inst. of Electron. Mater. Technol., Warsaw, Poland
Abstract :
Summary form only given. The authors report on the technology of GaN synthesis which is based on reactive ion sputtering from a Ga target in a nitrogen atmosphere. This process is carried out at room temperature and in low pressure conditions.
Keywords :
III-V semiconductors; gallium compounds; recrystallisation; refractive index; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; 293 to 298 K; AlN buffer layer; GaN; Si substrate; layer thickness; nitrogen atmosphere; reactive ion sputtering; recrystallisation; refractive index; stoichiometric growth; thin films; Argon; Atmosphere; Gallium nitride; Inductors; Materials science and technology; Nitrogen; Radio frequency; Refractive index; Sputtering; Temperature;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946557
