DocumentCode
3429518
Title
Synthesis of GaN by reactive sputtering at low temperature
Author
Jagoda, A. ; Dobrzanski, L. ; Stanczyk, B.
Author_Institution
Inst. of Electron. Mater. Technol., Warsaw, Poland
fYear
2001
fDate
26-30 June 2001
Firstpage
101
Lastpage
102
Abstract
Summary form only given. The authors report on the technology of GaN synthesis which is based on reactive ion sputtering from a Ga target in a nitrogen atmosphere. This process is carried out at room temperature and in low pressure conditions.
Keywords
III-V semiconductors; gallium compounds; recrystallisation; refractive index; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; 293 to 298 K; AlN buffer layer; GaN; Si substrate; layer thickness; nitrogen atmosphere; reactive ion sputtering; recrystallisation; refractive index; stoichiometric growth; thin films; Argon; Atmosphere; Gallium nitride; Inductors; Materials science and technology; Nitrogen; Radio frequency; Refractive index; Sputtering; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location
Zakopane, Poland
Print_ISBN
0-7803-7136-4
Type
conf
DOI
10.1109/WBL.2001.946557
Filename
946557
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