Title :
The influence of Ar-N/sub 2/ plasma conditions on GaN thin film deposition by reactive magnetron sputtering
Author :
Stanczyk, B. ; Jagoda, A.
Author_Institution :
Inst. of Electron. Mater. Technol., Warsaw, Poland
Abstract :
Summary form only given. This paper presents some problems concerning the technology of GaN thin films fabrication using RF sputtering from a Ga target in Ar-N/sub 2/ gas mixtures.
Keywords :
III-V semiconductors; gallium compounds; photoluminescence; refractive index; scanning electron microscopy; secondary ion mass spectra; semiconductor thin films; sputter deposition; stoichiometry; wide band gap semiconductors; Ar-N/sub 2/; Ar-N/sub 2/ plasma; GaN; SEM; SIMS; film thickness; photoluminescence; reactive magnetron sputtering; refractive index; stoichiometry; thin film; Artificial intelligence; Gallium nitride; Plasmas; Sputtering;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946558
