DocumentCode
3429566
Title
A monolithic CMOS/MEMS accelerometer with zero-g calibration readout circuit
Author
Yu-Sian Liu ; Chien-Jo Huang ; Fu-Yen Kuo ; Kuei-Ann Wen ; Long-Sheng Fan
Author_Institution
Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2013
fDate
1-4 July 2013
Firstpage
2106
Lastpage
2110
Abstract
A monolithic accelerometer design with zero-g calibration with TSMC 0.18 μm mixed-signal 1P6M process is presented. On-chip digital offset calibration enables compensation of random mechanical offset in the sensor due to process variation. The maximum 21 fF capacitance mismatch can be calibrated. The simulation results show that the whole system have 452.1 mV/g sensitivity. The power consumption is about 1.16 mW. The output noise is 26.85 μg/√Hz at 1KHz.
Keywords
accelerometers; calibration; microsensors; monolithic integrated circuits; mixed-signal 1P6M process; monolithic CMOS-MEMS accelerometer design; on-chip digital offset calibration; random mechanical offset; zero-g calibration readout circuit; Accelerometers; CMOS integrated circuits; Calibration; Capacitance; Noise; Radiation detectors; Registers; Accelerometer; Capacitive Readout; Offset Calibration; Readout Circuit; Zero-g Calibration;
fLanguage
English
Publisher
ieee
Conference_Titel
EUROCON, 2013 IEEE
Conference_Location
Zagreb
Print_ISBN
978-1-4673-2230-0
Type
conf
DOI
10.1109/EUROCON.2013.6625271
Filename
6625271
Link To Document