Title :
c-BN coating produced by arc-jet plasma
Author :
Babaev, V.G. ; Savchenko, N.F. ; Guseva, M.B. ; Vaullin, V.P. ; Guden, V.S. ; Khvostov, V.V.
Author_Institution :
Dept. of Phys., Moscow State Univ., Russia
Abstract :
c-BN coating with the thickness of 1 mm was produced on an Mo substrate. Arc-jet deposition was performed in a mixture of Ar and N/sub 2/ gases. h-BN was used as the precursor. The equipment included a W-hollow cathode with plasma density about 10/sup 14/ cm/sup -3/ at 200 A discharge current. The Ar pressure in the working chamber was 1 Torr and the residual pressure was of 10/sup -2/ Torr. The working substrate temperature ranged from 500 to 1000/spl deg/C and the film growth rate was about 0.2 mm/h. Chemical analysis reveals the presence of carbon. The electron diffraction pattern (JEM-100C) corresponds to polycrystalline cubic structure with a crystalline mean size of 1000 /spl Aring/ and lattice constant a=3.58 /spl Aring/.
Keywords :
III-V semiconductors; boron compounds; carbon; electron diffraction; lattice constants; plasma deposited coatings; plasma deposition; semiconductor growth; semiconductor thin films; 1 mm; 1 torr; 10/sup -2/ torr; 1000 A; 200 A; 3.58 A; 500 to 1000 degC; Ar-N/sub 2/; BN:C; Mo; W-hollow cathode; arc-jet plasma deposition; c-BN coating; chemical analysis; crystalline mean size; electron diffraction pattern; film growth; lattice constant; polycrystalline cubic structure; substrate temperature; Argon; Cathodes; Chemical analysis; Coatings; Electrons; Gases; Plasma density; Plasma temperature; Substrates; Temperature distribution;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946566
