DocumentCode
3429779
Title
Development of 2 stage bump forming method using wire bonding technique
Author
Tsukahara, Norihito ; Higashi, Kazushi ; Kumagai, Koichi
Author_Institution
Matsumoto Yushi-Seiyaku Co. Ltd., Japan
fYear
1995
fDate
4-6 Dec 1995
Firstpage
291
Lastpage
295
Abstract
Among the features of SBB (Stud Bump Bonding), which is a flip-chip mounting method, there is a “2 stage bump formed by wire bonding technique”. In order to form the 2 stage bump the second bonding process must be added to the first, which is necessary for conventional wire bonding. To stabilize the second bonding, techniques are needed: to assure the Au-Au junction between a bump base formed by the first bonding and gold wire; and to stabilize the gold wire break point after the second bonding. The authors make clear the influence on these techniques of the capillary profile and heat influenced area, or recrystallization area, which appears when a ball is formed at the top of the gold wire. They confirm that, by properly selecting such conditions, the second bonding can be stable and a 2 stage bump of high quality is formed in actual mass production
Keywords
flip-chip devices; gold; integrated circuit packaging; lead bonding; multichip modules; 2 stage bump forming method; Au; Au wire break point stabilization; Au-Au junction; MCM; ball formation; capillary profile; flip-chip mounting method; heat influenced area; mass production; recrystallization area; second bonding process; stud bump bonding; wire bonding; Bonding processes; Circuits; Electrodes; Flowcharts; Gold; Laboratories; Manufacturing processes; Resins; Seals; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International
Conference_Location
Omiya
Print_ISBN
0-7803-3622-4
Type
conf
DOI
10.1109/IEMT.1995.541047
Filename
541047
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