Title :
Room temperature operation of Si single-electron memory with self-aligned floating dot gate
Author :
Nakajima, A. ; Futatsugi, T. ; Kosemura, K. ; Fukano, T. ; Yokoyama, N.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Reports on a new Si single-electron memory device comprised of a narrow channel field effect transistor (FET) having an ultra-small selfaligned floating dot gate and its ability to exhibit clear, single-electron memory effects at room temperature.
Keywords :
elemental semiconductors; field effect transistors; semiconductor storage; silicon; single electron transistors; tunnel transistors; Si; narrow channel field effect transistor; room temperature operation; self-aligned floating dot gate; single-electron memory; Dry etching; FETs; Fabrication; Hysteresis; Single electron memory; Temperature; US Department of Transportation; Voltage; Wet etching; Wire;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554140
