• DocumentCode
    3429906
  • Title

    Room temperature operation of Si single-electron memory with self-aligned floating dot gate

  • Author

    Nakajima, A. ; Futatsugi, T. ; Kosemura, K. ; Fukano, T. ; Yokoyama, N.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • fYear
    1996
  • fDate
    8-11 Dec. 1996
  • Firstpage
    952
  • Lastpage
    954
  • Abstract
    Reports on a new Si single-electron memory device comprised of a narrow channel field effect transistor (FET) having an ultra-small selfaligned floating dot gate and its ability to exhibit clear, single-electron memory effects at room temperature.
  • Keywords
    elemental semiconductors; field effect transistors; semiconductor storage; silicon; single electron transistors; tunnel transistors; Si; narrow channel field effect transistor; room temperature operation; self-aligned floating dot gate; single-electron memory; Dry etching; FETs; Fabrication; Hysteresis; Single electron memory; Temperature; US Department of Transportation; Voltage; Wet etching; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1996. IEDM '96., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-3393-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1996.554140
  • Filename
    554140
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3429906