DocumentCode :
3429983
Title :
Temperature dependence of optical energy gap of GaSe
Author :
Kepinska, M. ; Kovalyuk, Z. ; Murri, R. ; Nowak, M.
Author_Institution :
Inst. of Phys., Silesian Univ. of Technol., Katowice, Poland
fYear :
2001
fDate :
26-30 June 2001
Firstpage :
146
Abstract :
Summary form only given. Thin films and wafers of cleaved crystalline GaSe were investigated using optical reflectance (R) and transmittance (T) for wavelengths from 200 nm to 1050 nm. The investigations were performed at different temperatures from 77 K to 333 K using a cryogenic microminiature refrigeration system based on the Joule-Thomson effect. The derived spectra of the real part of the refractive index and the absorption coefficient are presented.
Keywords :
III-VI semiconductors; Joule-Thomson effect; absorption coefficients; energy gap; gallium compounds; refractive index; semiconductor thin films; visible spectra; 200 to 1050 nm; 77 to 333 K; GaSe; Joule-Thomson effect; absorption coefficient; layered semiconductor; reflectance; refractive index; temperature dependence; thin films; transmittance; Cryogenics; Crystallization; Gases; Optical films; Optical refraction; Optical variables control; Reflectivity; Refractive index; Refrigeration; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
Type :
conf
DOI :
10.1109/WBL.2001.946581
Filename :
946581
Link To Document :
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