Title :
Dry etching of bulk 4H-SiC and DLC/SiC structure
Author :
Sniecikowski, P. ; Szmidt, J. ; Aung, M.T.H. ; Niedzielski, P. ; Bakowski, M.
Author_Institution :
Inst. of Microelectron. & Optoelectronics, Warsaw Univ. of Technol., Poland
Abstract :
Summary form only given. We report a parametric investigation of the etching of 4H-SiC bulk wafers and thin diamond like carbon (DLC) layers on the SiC substrates. The 4H-SiC samples were bulk substrates doped with N, and an amorphous DLC layer (/spl sim/500A thick) was deposited on the same SiC substrate by reactive pulse plasma assisted method. The reactive ion etching (RIE) method and fluorine containing plasma (CF/sub 4/) were employed and Ar and O/sub 2/ were used as a gas additive.
Keywords :
amorphous state; carbon; silicon compounds; sputter etching; substrates; wide band gap semiconductors; 500 A; C; DLC/SiC structure; RIE; SiC; SiC substrates; bulk 4H-SiC; diamond like carbon; dry etching; etch rates; fluorine containing plasma; reactive ion etching; reactive pulse plasma assisted method; Dry etching; Plasma applications; Plasma chemistry; Plasma density; Plasma properties; Plasma sources; Silicon carbide; Sputter etching; Wet etching;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946585
