Title :
Physical-chemical etching of GaN layers on sapphire
Author :
Szmidt, J. ; Szczesny, A. ; Beck, R.B.
Author_Institution :
Inst. ofMicroelectronics & Optoelectronics, Warsaw Univ. of Technol., Poland
Abstract :
Summary form only given. In this work we report the reactive ion etching (RIE) of GaN using CF/sub 4//Ar and CHF/sub 3//Ar chemistries. The effects of RF plasma power, pressure and gas flow rates on the etch rate were investigated as well as the interaction of physical and chemical components of the etch process. We used 2.8 /spl mu/m, n-type GaN film, grown on Al/sub 2/O/sub 3/ substrate. It was patterned with evaporated aluminum, which was chemically removed after the etch process.
Keywords :
III-V semiconductors; gallium compounds; plasma materials processing; sapphire; semiconductor thin films; sputter etching; wide band gap semiconductors; 150 to 300 W; 2.8 micron; 30 to 150 mtorr; Al; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ substrate; CF/sub 4//Ar chemistry; CHF/sub 3//Ar chemistry; GaN; GaN layers; RF plasma power; RIE; Tencor Alpha-Step; dry etching; etch processing; etch profile; etch rate; evaporated aluminum; gas flow rates; n-type GaN film; physical-chemical etching; pressure; reactive ion etching; sapphire; wide bandgap semiconductor; Aluminum; Chemical processes; Etching; Fluid flow; Gallium nitride; Plasma applications; Plasma chemistry; Radio frequency; Substrates;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946586
