Title :
Electric characterization and plasma processing of nanocrystalline c-BN layers
Author :
Werbowy, A. ; Firek, P. ; Szmidt, J. ; Olszyna, A.
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
Abstract :
Summary form only given. In this work results of electrical characterization of plasma-synthesized thin nanocrystalline c-BN films, deposited on Si p-type and n-type substrates, are presented, based on capacitance-voltage and current-voltage measurements of MIS Al/BN/Si structures. Results are also shown of structural investigations of the layers (SEM images). Finally, we will demonstrate the possibility of selective dry RF plasma etching of BN layers using various gas mixtures, which is a continuation of our earlier efforts.
Keywords :
MIS structures; boron compounds; insulating thin films; nanostructured materials; plasma deposited coatings; scanning electron microscopy; sputter etching; Al; BN; MIS Al/BN/Si structures; SEM images; Si; Si substrates; capacitance-voltage measurements; current-voltage measurements; electrical characterization; gas mixtures; nanocrystalline c-BN layers; plasma processing; plasma-synthesized thin nanocrystalline c-BN films; selective dry RF plasma etching; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Dry etching; Electric variables measurement; Plasma applications; Plasma materials processing; Plasma measurements; Radio frequency; Semiconductor films;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946587