Title :
The study of thermal oxidation of SiC surface
Author :
Aung, M.T.H. ; Szmidt, J. ; Bakowski, M.
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
Abstract :
The authors report systematic investigation of SiO/sub 2/-SiC interface states for n-type 4H-SiC. MOS capacitors were fabricated on homoepilayers grown on n-type 4H-SiC with wet oxidation followed by wet re-oxidation and postmetallization anneals (PMA).
Keywords :
MOS capacitors; annealing; interface states; oxidation; semiconductor-insulator boundaries; silicon compounds; wide band gap semiconductors; MOS capacitors; SiC; SiC surface; SiO/sub 2/-SiC; SiO/sub 2/-SiC interface states; homoepilayers; n-type 4H-SiC; postmetallization anneal; thermal oxidation; wet oxidation; wet re-oxidation anneal; Annealing; Capacitance-voltage characteristics; Current measurement; Interface states; Leakage current; Lighting; MOS capacitors; Oxidation; Shape measurement; Silicon carbide;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946590
