Title :
SiC field emission arrays
Author :
Gorecka-Drzazga, A.
Author_Institution :
Inst. of Microsystem Technol., Tech. Univ. Wroclaw, Poland
Abstract :
Summary form only given. Results from studies of the fabrication process and emissivity of FEAs of mold-type made of silicon carbide are presented. The gated and non-gated field emission arrays of SiC sharp emitter tips have been produced by the transfer mold technique.
Keywords :
moulding; silicon compounds; vacuum microelectronics; wide band gap semiconductors; SiC; emissivity; field emission arrays; sharp emitter tips; transfer mold technique; Anodes; Chemical technology; Fabrication; Glass; Microwave technology; Oxidation; Silicon carbide; Sputter etching; Thermal resistance; Wet etching;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946599
