DocumentCode
3430380
Title
Al/sub 2/O/sub 3/ layers for microelectronic applications
Author
Dusinski, E. ; Szmidt, J. ; Zdunek, K. ; Elert, M. ; Barcz, A.
Author_Institution
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
fYear
2001
fDate
26-30 June 2001
Firstpage
193
Lastpage
194
Abstract
Summary form only given. The investigations concern Al/sub 2/O/sub 3/ layers produced by the reactive pulse plasma (RPP) method on semiconductor substrates (Si, SiC). The layers have been investigated both in terms of structure and electrophysical properties. We have developed a technology for producing MIS transistors with these layers as dielectrics, and the electrical parameters of the transistors have been defined.
Keywords
MISFET; alumina; dielectric thin films; plasma CVD; semiconductor technology; Al/sub 2/O/sub 3/ dielectric layers; Al/sub 2/O/sub 3/-Si; Al/sub 2/O/sub 3/-SiC; MIS transistors; Si; SiC; electrical parameters; electrophysical properties; layer structure; microelectronic applications; process technology; reactive pulse plasma; Chemicals; Dielectric substrates; Mass spectroscopy; Microelectronics; Plasma applications; Plasma materials processing; Plasma properties; Silicon carbide; Threshold voltage; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location
Zakopane, Poland
Print_ISBN
0-7803-7136-4
Type
conf
DOI
10.1109/WBL.2001.946602
Filename
946602
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