Title :
Al/sub 2/O/sub 3/ layers for microelectronic applications
Author :
Dusinski, E. ; Szmidt, J. ; Zdunek, K. ; Elert, M. ; Barcz, A.
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
Abstract :
Summary form only given. The investigations concern Al/sub 2/O/sub 3/ layers produced by the reactive pulse plasma (RPP) method on semiconductor substrates (Si, SiC). The layers have been investigated both in terms of structure and electrophysical properties. We have developed a technology for producing MIS transistors with these layers as dielectrics, and the electrical parameters of the transistors have been defined.
Keywords :
MISFET; alumina; dielectric thin films; plasma CVD; semiconductor technology; Al/sub 2/O/sub 3/ dielectric layers; Al/sub 2/O/sub 3/-Si; Al/sub 2/O/sub 3/-SiC; MIS transistors; Si; SiC; electrical parameters; electrophysical properties; layer structure; microelectronic applications; process technology; reactive pulse plasma; Chemicals; Dielectric substrates; Mass spectroscopy; Microelectronics; Plasma applications; Plasma materials processing; Plasma properties; Silicon carbide; Threshold voltage; Wet etching;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946602
