Title :
Titanium oxide produced by plasma technology for MOS structures
Author :
Dusinski, E. ; Szmidt, J. ; Zdunek, K. ; Elert, M. ; Barcz, A.
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
Abstract :
The authors study TiO/sub 2/ layers produced by Reactive Pulse Plasma (RPP) deposition on semiconductor substrates. The layers have been investigated both in terms of structure and electrophysical properties. The thickness and refractive index, the structure and the chemical composition were examined by ellipsometry, SEM and SIMS, respectively. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of MOS structures were determined. The layers obtained show satisfactory mechanical and electrophysical properties. We have developed a technology for producing MIS transistors with these layers as dielectric gate.
Keywords :
MIS structures; MISFET; dielectric thin films; plasma deposition; refractive index; scanning electron microscopy; secondary ion mass spectra; titanium compounds; C-V characteristics; I-V characteristics; MIS transistors; MOS structures; SEM; SIMS; TiO/sub 2/; chemical composition; ellipsometry; reactive pulse plasma deposition; refractive index; semiconductor substrates; thickness; Capacitance-voltage characteristics; Chemical technology; Dielectrics; Ellipsometry; Mechanical factors; Plasma chemistry; Plasma properties; Refractive index; Substrates; Titanium;
Conference_Titel :
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location :
Zakopane, Poland
Print_ISBN :
0-7803-7136-4
DOI :
10.1109/WBL.2001.946608
