DocumentCode
3430568
Title
Analyzing bridging faults impact on EEPROM cell array
Author
Portal, J.M. ; Pérez, A.
Author_Institution
ICF/L2MP-UMR CNRS 6137
fYear
2001
fDate
May 29 2001-June 1 2001
Firstpage
3
Lastpage
8
Abstract
The objective of this paper is to present a specific EEPROM functional fault model related to the impact of bridging faults in the array of cells. Moreover, the evolution of these functional faults throughout the useful life of the memory is established. In this aim, a hierarchical overview from the array structure down to the floating gate transistor simulation model is given. A set of bridging faults is defined with their corresponding stimuli. Finally, a representative simulation example is detailed.
Keywords
Built-in self-test; Charge transfer; Circuit faults; Degradation; EPROM; Nonvolatile memory; Random access memory; Read-write memory; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Workshop, 2001. IEEE European
Conference_Location
Stockholm, Sweden
ISSN
1530-1877
Print_ISBN
0-7695-1017-5
Type
conf
DOI
10.1109/ETW.2001.946653
Filename
946653
Link To Document