• DocumentCode
    3430568
  • Title

    Analyzing bridging faults impact on EEPROM cell array

  • Author

    Portal, J.M. ; Pérez, A.

  • Author_Institution
    ICF/L2MP-UMR CNRS 6137
  • fYear
    2001
  • fDate
    May 29 2001-June 1 2001
  • Firstpage
    3
  • Lastpage
    8
  • Abstract
    The objective of this paper is to present a specific EEPROM functional fault model related to the impact of bridging faults in the array of cells. Moreover, the evolution of these functional faults throughout the useful life of the memory is established. In this aim, a hierarchical overview from the array structure down to the floating gate transistor simulation model is given. A set of bridging faults is defined with their corresponding stimuli. Finally, a representative simulation example is detailed.
  • Keywords
    Built-in self-test; Charge transfer; Circuit faults; Degradation; EPROM; Nonvolatile memory; Random access memory; Read-write memory; Testing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Workshop, 2001. IEEE European
  • Conference_Location
    Stockholm, Sweden
  • ISSN
    1530-1877
  • Print_ISBN
    0-7695-1017-5
  • Type

    conf

  • DOI
    10.1109/ETW.2001.946653
  • Filename
    946653