Title :
A 6-18 GHz 20 W SPDT switch using shunt discrete PIN diodes
Author :
Shigematsu, T. ; Suematsu, N. ; Takeuchi, N. ; Iyama, Y. ; Mizobuchi, A.
Author_Institution :
Inf. Technol. Res. & Dev. Center, Mitsubishi Electr. Corp., Kanagawa, Japan
Abstract :
A broadband high power SPDT switch using shunt discrete PIN diodes is presented. By using shunt SPDT switch configuration, high power performance can be obtained. A novel structure, in which matching sections are added outside of shunt PIN diodes, provides broadband characteristics. The insertion loss of the fabricated MIC switch is less than 2.0 dB at 6 to 18 GHz, and is less than 1.5 dB at 7 to 17 GHz. The power handling capability is over 20 W CW at 12 GHz.
Keywords :
microwave integrated circuits; p-i-n diodes; power semiconductor diodes; power semiconductor switches; 1.5 to 2 dB; 20 W; 6 to 18 GHz; Al/sub 2/O/sub 3/; MIC switch; SHF; SPDT switch; broadband characteristics; high power SPDT switch; matching sections; power handling capability; shunt discrete PIN diodes; Bonding; Circuit simulation; Communication switching; Equivalent circuits; Frequency; Insertion loss; Shunt (electrical); Switches; Switching circuits; Wires;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602847
