DocumentCode :
3430714
Title :
Low firing temperature silicon oxide for microwave substrate
Author :
Hazeyama, I. ; Ikuina, K. ; Kimura, M. ; Utsumi, K.
Author_Institution :
Mater. Dev. Center, NEC Corp., Kawasaki, Japan
fYear :
1995
fDate :
4-6 Dec 1995
Firstpage :
314
Lastpage :
317
Abstract :
A novel material for making microwave substrates has been developed. The material is silicon oxide, which has a low dielectric constant (εr=5.0-5.2 at 10-20 GHz) and a low loss tangent (tanδ=8.3×10-4-9.1-10-4 at 10-20 GHz). The new process makes sintering of this silicon oxide possible at low temperature (below 1000°C). Consequently, substrates consisting of this silicon oxide are capable of forming copper conductors by cofiring. The key technologies of this process are using amorphous silicon oxide powder that has a particle diameter of the nanometer order, and firing in an atmosphere containing water. Additionally, a multilayer substrate was developed by applying a green sheet lamination technique
Keywords :
ceramics; dielectric losses; permittivity; powder technology; silicon compounds; sintering; substrates; 10 to 20 GHz; 1000 C; SiO2; amorphous powder; cofiring; copper conductor; dielectric constant; firing temperature; green sheet lamination; loss tangent; microwave substrate; multilayer substrate; silicon oxide; sintering; Amorphous silicon; Conductors; Copper; Dielectric constant; Dielectric losses; Dielectric materials; Dielectric substrates; Firing; Powders; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International
Conference_Location :
Omiya
Print_ISBN :
0-7803-3622-4
Type :
conf
DOI :
10.1109/IEMT.1995.541052
Filename :
541052
Link To Document :
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